Paulus L Gareso holds a degree in Semiconductor Physics from the University of Hasanuddin, Makassar, Indonesia (1989), a Master degree in Semiconductor Heterojunction GaAs/GaSb from Macquarie University- Sydney, Australia (1999). He received Australian Development Scholarship (ADS) from Australian Government to take a PhD program in Australian National University (2002-2006). His PhD thesis was Atomic Intermixing of InGaAs/AlGaAs and InGaAs/InP Quantum Well Structures. He was a secretary of Physics Department from 2009-2012 and was appointed as Professor in Semiconductor Physics 1n 2019. His research activities include Metal Oxide Semiconductor ZnO and TiO2, thin films and nanocomposite material.

Ph. D. , Experimental Material Physics Australian National University, 2008

M.Sc., Experimental Material Physics, University of Macquarie, 1998

Sarjana, Fisika, Universitas Hasanuddin, 1989

• Gareso, P.L., Tan, H.H., Wong-Leung, J., Jagadish, C., Dao, L.V., Proton irradiation induced intermixing in InxGa 1-xAs/InP quantum wells Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, (2005).
• Gareso, P.L., Buda, M., Tan, H.H., (…), Ilyas, S., Gal, M., On quantifying the group-V to group-III interdiffusion rate in in xGa1-xAs/InP quantum wells by differential reflectance, Conference Proceedings – Lasers and Electro-Optics Society Annual Meeting-LEOS (2005).
• Fu, L., Lever, P., Gareso, P.L., (…), Reece, P., Gal, M., Impurity-free vacancy disordering of quantum wells and quantum dots for optoelectronic/photonic integrated circuits, IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (2005).